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Top / Semiconductors / MOSFETS

Available Characteristics

Series

  • 2N4351
  • 2N4352
  • 3N161
  • 3N163
  • 3N165
  • 3N170
  • 3N172
  • 3N190

RDS (on) (Ohm) Max

  • 200 O
  • 250 O
  • 300 O
  • 350 O
  • 600 O

Channel

  • Dual P-Channel Enhancement Mode
  • N-Channel Enhancement Mode
  • P-Channel Enhancement Mode

Breakdown V Min

  • -40 V
  • -30 V
  • -25 V
  • 25 V
  • 30 V
  • 40 V

IGSS (pA) Max

  • ± 10
  • -500 pA
  • -200 pA
  • -10 pA
  • 10 pA

Package

  • TO-72
  • TO-99

Available Series

2N4351

Picture of 2N4351

2N4352

Picture of 2N4352

3N161

Picture of 3N161

3N163

Picture of 3N163

3N165

Picture of 3N165

3N170

Picture of 3N170

3N172

Picture of 3N172

3N190

Picture of 3N190
  
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